Nitrogen-doped diamond films have been synthesized by EA-CVD （electron assisted chemical vapor deposition） technique. The quality and nitrogen impurity states of the diamond films are characterized by SEM, raman spectroscopy, XPS and EPR speclroscopy, respectively. The results show that the morphology changes from well-defined facets to cauliflower-like structures, the content of amorphous carbon increases and the quality drops with increasing the nitrogen flow rate. Furthermore, in the films, it can be observed that nitrogen impurity exists in the forms ofNs^0, [N-V]^0 and [N-V]^1. The contents of [N-V]^0 and [N-V]^-1 are lower when the nitrogen flow rate is relatively high, and the concentration of Ns^0 varies from 15 ppm to 483 ppm.
The CIGS thin films are prepared by co-evaporation of elemental In,Ga and Se on the substrates of Mo-coated glasses at 400℃ followed by co-evaporation of elemental Cu and Se at 550℃. We study the structural and electrical properties using XRD,XRF and Hall effect measurements. In general,Cu(In,Ga)5Se8 phase exists when Cu/(In+Ga) ratio is from 0.17 to 0.27,Cu(In,Ga)3Se5 phase exists for Cu/(In+Ga) ratio between 0.27 and 0.41,Cu2(In,Ga)4Se7 and Cu(In,Ga)2Se3.5 phases exist for Cu/(In+Ga) ratio between 0.41 and 0.61,and OVC(or ODC) and CuIn0.7Ga0.3Se2 phases exist when Cu/(In+Ga) ratio is from 0.61 to 0.88. With the increase of Cu/(In+Ga) ratio,the carrier concentrations of the films gradually increase,but the electrical resistivity gradually decreases.
