A novel plasmonic structure consisting of three nano-scaled slits coupled by nano-disk-shaped nanocavities is pro- posed to produce subwavelength focusing and beam bending at optical frequencies. The incident light passes through the metal slits in the form of surface plasmon polaritons （SPPs） ,and then scatters into radiation fields. Numerical simulations using finite-difference time-domain （FDTD） method show that the transmitted fields through the design example can gener- ate light focusing and deflection by altering the refractive index of the coupled nanocavity. The simulation results indicate that the focal spot is beyond the diffraction limit. Light impinges on the surface at an angle to the optical axis will add an extra planar phase front that interferes with the asymmetric phase front of the plasmonic lens, leading to a larger bending angle off the axial direction. The advantages of the proposed plasmonic lens are smaller device size and ease of fabrication. Such geometries offer the potential to be controlled by using nano-positior!i0g systems for applications in dynamic beam shaping and scanning on the nanoscale.
In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
